The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Jul. 26, 2004
Dong Hyun Cho, Daegu, KR;
Masayoshi Koike, Kyungki-do, KR;
Yuiji Imai, Kyungki-do, KR;
Min Ho Kim, Kyungki-do, KR;
Bang Won OH, Kyungki-do, KR;
Hun Joo Hahm, Kyungki-do, KR;
Dong Hyun Cho, Daegu, KR;
Masayoshi Koike, Kyungki-do, KR;
Yuiji Imai, Kyungki-do, KR;
Min Ho Kim, Kyungki-do, KR;
Bang Won Oh, Kyungki-do, KR;
Hun Joo Hahm, Kyungki-do, KR;
Samsung Electronics Co., Ltd., Seoul, KR;
Abstract
Provided are a nitride semiconductor light-emitting device comprising a polycrystalline or amorphous substrate made of AlN; a plurality of dielectric patterns formed on the AlN substrate and having a stripe or lattice structure; a lateral epitaxially overgrown-nitride semiconductor layer formed on the AlN substrate having the dielectric patterns by Lateral Epitaxial Overgrowth; a first conductive nitride semiconductor layer formed on the nitride semiconductor layer; an active layer formed on the first conductive nitride semiconductor layer; and a second conductive nitride semiconductor layer formed on the active layer; and a process for producing the same.