The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2014

Filed:

Jan. 13, 2012
Applicants:

Fu-tien Weng, Hsinchu, TW;

Chieh-yuan Cheng, Hsinchu, TW;

Han-lin Wu, Hsinchu, TW;

Inventors:

Fu-Tien Weng, Hsinchu, TW;

Chieh-Yuan Cheng, Hsinchu, TW;

Han-Lin Wu, Hsinchu, TW;

Assignee:

VisEra Technologies Company Limited, Hsinchu Science Park, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 21/00 (2006.01); H01L 27/146 (2006.01); H01L 31/0216 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14621 (2013.01); H01L 31/02162 (2013.01);
Abstract

A method for fabricating a color filter structure includes: providing a base layer; forming a first colored layer on the base layer; patterning the first colored layer to form a pair of first colored patterns, a first opening between the first colored patterns, and a second opening adjacent to the first colored patterns; forming a first dielectric layer on the first colored patterns and the base layer exposed by the first and second openings; forming a second colored layer on the first colored patterns and the first dielectric layer; patterning the second colored layer to form a second colored pattern in the first opening; forming a second dielectric layer on the first dielectric layer and the second colored pattern; forming a third colored layer on the second dielectric layer; and patterning the third colored layer to form a third colored pattern in the second opening.


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