The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Jun. 13, 2013
AU Optronics Corporation, Hsinchu, TW;
Huang-Chun Wu, Hsinchu, TW;
Shine-Kai Tseng, Taoyuan County, TW;
Au Optronics Corporation, Hsinchu, TW;
Abstract
A method of fabricating a TFT includes providing a substrate where a gate, an insulating layer, and a channel layer are formed. A conductive layer is formed on the substrate to cover the channel layer and the insulating layer. A photoresist layer is formed on the conductive layer. A photo mask is placed above the photoresist layer and has a data line pattern, a source pattern, and a drain pattern. A first width (W) between the source pattern and the drain pattern and a second width (W) of the data line pattern satisfy the following: if W−1(um), then W+a(um), and 0.3<a<0.7. An exposing process is performed by using the photo mask, and a development process is performed to pattern the photoresist layer. The conductive layer is patterned by using the photoresist layer as an etching mask to form a source, a drain, and a data line.