The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Mar. 20, 2012
Jenn-chang Hwang, Hsinchu, TW;
Li-shiuan Tsai, Hsinchu, TW;
Chun-yi Lee, Hsinchu, TW;
Cheng-lun Tsai, Hsinchu, TW;
Jenn-Chang Hwang, Hsinchu, TW;
Li-Shiuan Tsai, Hsinchu, TW;
Chun-Yi Lee, Hsinchu, TW;
Cheng-Lun Tsai, Hsinchu, TW;
National Tsing Hua University, Hsinchu, TW;
Abstract
An N-type organic thin film transistor, an ambipolar field-effect transistor, and methods of fabricating the same are disclosed. The N-type organic thin film transistor of the present invention comprises: a substrate; a gate electrode locating on the substrate; a gate-insulating layer covering the gate electrode, and the gate-insulating layer is made of silk protein; a buffering layer locating on the gate-insulating layer, and the buffering layer is made of pentacene; an N-type organic semiconductor layer locating on the buffering layer; and a source and a drain electrode, wherein the N-type organic semiconductor layer, the buffering layer, the source and the drain electrode are disposed over the gate dielectric layer.