The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Jan. 24, 2007
Fumikazu Ojima, Hamamatsu, JP;
Jun Suzuki, Hamamatsu, JP;
Ryusuke Kitaura, Hamamatsu, JP;
Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
The infrared ray absorbing filmis provided with a first layercontaining TiN and a second layercontaining an Si based compound, converting energy of infrared ray made incident from the second layerto heat. TiN is high in absorption rate of infrared ray over a wavelength range shorter than 8 μm, while high in reflection rate of infrared ray over a wavelength range longer than 8 μm. Therefore, if an Si based compound layer excellent in absorption rate of infrared ray over a longer wavelength range is laminated on a TiN layer, infrared ray over a wavelength range lower in absorption rate on the TiN layer can be favorably absorbed on the Si based compound layer, and also infrared ray in an attempt to transmit the Si based compound layer can be reflected on a boundary surface of the TiN layer and returned to the Si based compound layer.