The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Jan. 16, 2013
Dongbu Hitek Co., Ltd., Seoul, KR;
Ki-Jun Yun, Seoul, KR;
Dongbu HiTek Co., Ltd., Seoul, KR;
Abstract
A method for fabricating an image sensor includes at least one of: (1) Forming a gate on a semiconductor substrate; (2) Forming spacers on both side walls of the gate and forming a dummy pattern on an upper portion of the semiconductor substrate; and (3) Forming a metal pad for an electrical connection on an upper portion of the dummy pattern. The method may include at least one of: (1) Forming an interlayer dielectric layer covering the entire semiconductor substrate, (2) Etching portions of the interlayer dielectric layer and the semiconductor substrate to form a super-contact hole; and (3) forming an insulation film on the entire surface of the interlayer dielectric layer. The method may include forming normal contact holes such that a portion of an upper portion of the gate and a partial region of the metal pad for an electrical connection are exposed and filling up the normal contact holes with a conductive material to form normal contacts.