The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Sep. 25, 2006
Applicants:
Chrystel Deguet, Saint Ismier, FR;
Laurent Clavelier, Grenoble, FR;
Inventors:
Chrystel Deguet, Saint Ismier, FR;
Laurent Clavelier, Grenoble, FR;
Assignee:
Commissariat a l'Energie Atomique, Paris, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/46 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for making a thin-film element includes epitaxially growing a first crystalline layer on a second crystalline layer of a support where the second crystalline layer is a material different from the first crystalline layer, the first crystalline layer having a thickness less than a critical thickness. A dielectric layer is formed on a side of the first crystalline layer opposite to the support to form a donor structure. The donor structure is assembled with a receiver layer and the support is removed.