The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
May. 22, 2012
Toshiyuki Tani, Hiji-machi, JP;
Hiroshi Yamasaki, Oita Pref, KI;
Kentaro Takahashi, Oita Pref, JP;
Lily Springer, Dallas, TX (US);
Toshiyuki Tani, Hiji-machi, JP;
Hiroshi Yamasaki, Oita Pref, KI;
Kentaro Takahashi, Oita Pref, JP;
Lily Springer, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method for forming a vertical electrostatic discharge (ESD) protection device includes depositing a multi-layer n-type epitaxial layer on a substrate having p-type surface including first epitaxial depositing to form a first n-type epitaxial layer on the p-type surface, and second epitaxial depositing to form a second n-type epitaxial layer formed on the first n-type epitaxial layer. The first type epitaxial layer has a peak doping level which is at least double that of the second n-type epitaxial layer. A p+ layer is formed on the second n-type epitaxial layer. An etch step etches through the p+ layer and multi-layer n-type epitaxial layer to reach the substrate to form a trench. The trench is filled with a filler material to form a trench isolation region. A metal contact is formed on the p+ layer for providing contact to the p+ layer.