The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2014

Filed:

Jun. 20, 2012
Applicants:

Yong-won Song, Seoul, KR;

Jae-min Hong, Seoul, KR;

Jung Ah Lim, Chungcheongnam-do, KR;

Hak-sung Kim, Seoul, KR;

Seong-ji Kwon, Seoul, KR;

Inventors:

Yong-Won Song, Seoul, KR;

Jae-Min Hong, Seoul, KR;

Jung Ah Lim, Chungcheongnam-do, KR;

Hak-Sung Kim, Seoul, KR;

Seong-Ji Kwon, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed are a method for forming a metal oxide pattern and a method of manufacturing a thin film transistor using the patterned metal oxide. The method for forming a metal oxide pattern includes: preparing an ink composition including at least one metal oxide precursor or metal oxide nanoparticle, and a solvent; ejecting the ink composition on a substrate to form a pattern on the substrate; and photosintering the formed pattern. Herein, the metal oxide precursor is ionic.


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