The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Nov. 14, 2008
Jae Hoon Lee, Kyungki-do, KR;
Yong Chun Kim, Kyungki-do, KR;
Hyung KY Back, Kyungki-do, KR;
Moon Heon Kong, Kyungki-do, KR;
Dong Woo Kim, Choongcheongbook-do, KR;
Jae Hoon Lee, Kyungki-do, KR;
Yong Chun Kim, Kyungki-do, KR;
Hyung Ky Back, Kyungki-do, KR;
Moon Heon Kong, Kyungki-do, KR;
Dong Woo Kim, Choongcheongbook-do, KR;
Samsung Electronics Co., Ltd., Seoul, KR;
Abstract
A vertical group III-nitride light emitting device and a manufacturing method thereof are provided. The light emitting device comprises: a conductive substrate; a p-type clad layer stacked on the conductive substrate; an active layer stacked on the p-type clad layer; an n-doped AlGaInN layer stacked on the active layer; an undoped GaN layer stacked on the n-doped layer; and an n-electrode formed on the undoped GaN layer. The undoped GaN layer has a rough pattern formed on a top surface thereof.