The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2014

Filed:

Feb. 28, 2013
Applicant:

Fujitsu Semiconductor Limited, Yokohama, JP;

Inventor:

Wensheng Wang, Kawasaki, JP;

Assignee:

Fujitsu Limited, Yokohama, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

An upper electrode of a ferroelectric capacitor has a first layer formed of a first oxide expressed by a chemical formula AO(A: metal, O: oxygen) using a stoichiometric composition parameter x, and expressed by a chemical formula AOusing a actual composition parameter x, and a second layer formed of a second oxide, formed on the first layer, expressed by a chemical formula BO(B: metal) using a stoichiometric composition parameter yand expressed by a chemical formula BOusing a actual composition parameter y, which includes at least one of stone-wall crystal and column crystal.


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