The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2014

Filed:

Nov. 21, 2007
Applicants:

Masatsugu Masuda, Higashihiroshima, JP;

Kenji Terashima, Mihara, JP;

Inventors:

Masatsugu Masuda, Higashihiroshima, JP;

Kenji Terashima, Mihara, JP;

Assignee:

Sharp Kabushiki Kaisha, Osaka-shi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C09K 11/02 (2006.01); C09K 11/08 (2006.01); C09K 11/70 (2006.01); H01J 1/62 (2006.01); H01J 63/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

There are provided a phosphor which is a divalent europium-activated oxynitride phosphor substantially represented by General formula (A): EuSiAlON, a divalent europium-activated oxynitride phosphor substantially represented by General formula (B): MIEuSiAlONor a divalent europium-activated nitride phosphor substantially represented by General formula (C): (MIIEu)MIIISiN, having a reflectance of light emission in a longer wavelength region of visible light than a peak wavelength of 95% or larger, and a method of producing such phosphor; a nitride phosphor and an oxynitride phosphor which emit light efficiently and stably by the light having a wavelength ranging from 430 to 480 nm from a semiconductor light emitting device by means of a light emitting apparatus using such phosphor, and a producing method of such phosphor; and a light emitting apparatus having stable characteristics and realizing high efficiency.


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