The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
May. 29, 2012
Takahiro Suzuki, Osaka, JP;
Takaiki Nomura, Osaka, JP;
Satoru Tamura, Osaka, JP;
Kazuhito Hato, Osaka, JP;
Noboru Taniguchi, Osaka, JP;
Kenichi Tokuhiro, Osaka, JP;
Nobuhiro Miyata, Osaka, JP;
Takahiro Suzuki, Osaka, JP;
Takaiki Nomura, Osaka, JP;
Satoru Tamura, Osaka, JP;
Kazuhito Hato, Osaka, JP;
Noboru Taniguchi, Osaka, JP;
Kenichi Tokuhiro, Osaka, JP;
Nobuhiro Miyata, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
The method for producing the optical semiconductor of the present disclosure includes a mixing step of producing a mixture containing a reduction inhibitor and a niobium compound that contains at least oxygen in its composition; a nitriding step of nitriding the mixture by the reaction between the mixture and a nitrogen compound gas; and a washing step of isolating niobium oxynitride from the material obtained through the nitriding step by dissolving chemical species other than niobium oxynitride with a washing liquid. The optical semiconductor of the present disclosure substantially consists of niobium oxynitride having a crystal structure of baddeleyite and having a composition represented by the composition formula, NbON.