The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2014

Filed:

Jul. 26, 2007
Applicants:

Takuji Maeda, Osaka, JP;

Toshiyuki Honda, Kyoto, JP;

Masahiro Nakanishi, Kyoto, JP;

Tadashi Ono, Osaka, JP;

Tatsuya Adachi, Osaka, JP;

Isao Kato, Osaka, JP;

Inventors:

Takuji Maeda, Osaka, JP;

Toshiyuki Honda, Kyoto, JP;

Masahiro Nakanishi, Kyoto, JP;

Tadashi Ono, Osaka, JP;

Tatsuya Adachi, Osaka, JP;

Isao Kato, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/10 (2006.01); G06F 12/02 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

An access deviceincludes an access speed information partfor informing an access speed required for data recording by the access deviceto a nonvolatile memory deviceThe nonvolatile memory device includes an access condition determination partfor determining an access condition required for meeting the informed access speed and an access area determination unitfor determining an access area according to the determined access condition. The access deviceinforms the required access speed to the nonvolatile memory devicein advance so that the access condition determination partand the access area determination partin the nonvolatile memory devicerealize data recording which meets the access speed informed in advance upon the data recording. Thus, it is possible to access all the nonvolatile memory devices at a desired speed regardless of difference in characteristics of the recording speed of each of the nonvolatile memory devices.


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