The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Dec. 21, 2009
Aarnoud Laurens Roest, Geldrop, NL;
Linda Van Leuken-peters, Maarheeze, NL;
Robertus Andrianus Maria Wolters, Eindhoven, NL;
Aarnoud Laurens Roest, Geldrop, NL;
Linda Van Leuken-Peters, Maarheeze, NL;
Robertus Andrianus Maria Wolters, Eindhoven, NL;
NXP B.V., Eindhoven, NL;
Abstract
The invention relates to a semiconductor device comprising a physical structure () for use in a physical unclonable function, wherein the physical structure () comprises a lead-zirconium titanate layer (), and a silicon-comprising dielectric layer () deposited on the lead-zirconium-titanate layer (), wherein the silicon-comprising dielectric layer () has a rough surface (SR), the physical structure () further comprising a conductive layer () provided on the rough surface (SR) of the silicon-comprising dielectric layer (). The invention further relates to a method of manufacturing such semiconductor device. The invention also relates to a card, such as a smartcard, and to a RFID tag comprising such semiconductor device. The inventors have found that depositing of a silicon- comprising dielectric layer () on a lead-zirconium titanate layer () using vapor deposition results in a silicon-comprising dielectric layer () having a rough surface (SR). This rough surface (SR) can be used in a PUF to make a resistor (R) with a variable random value by depositing a conductive layer () on the rough surface (SR). Alternatively, the combination of both layers () can be used in a PUF as composite dielectric to make a capacitor (C) with a variable random capacitance value.