The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Sep. 30, 2008
Donald Ray Disney, Cupertino, CA (US);
Jun-wei Chen, Saratoga, CA (US);
Richard K. Williams, Cupertino, CA (US);
Hyungsik Ryu, San Jose, CA (US);
Wai Tien Chan, Hong Kong, CN;
Donald Ray Disney, Cupertino, CA (US);
Jun-Wei Chen, Saratoga, CA (US);
Richard K. Williams, Cupertino, CA (US);
HyungSik Ryu, San Jose, CA (US);
Wai Tien Chan, Hong Kong, CN;
Advanced Analogic Technologies (Hong Kong) Limited, Hong Kong, CH;
Abstract
An Electro-Static Discharge (ESD) protection device is formed in an isolated region of a semiconductor substrate. The ESD protection device may be in the form of a MOS or bipolar transistor or a diode. The isolation structure may include a deep implanted floor layer and one or more implanted wells that laterally surround the isolated region. The isolation structure and ESD protection devices are fabricated using a modular process that includes virtually no thermal processing. Since the ESD device is isolated, two or more ESD devices may be electrically 'stacked' on one another such that the trigger voltages of the devices are added together to achieve a higher effective trigger voltage.