The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Sep. 06, 2011
Masakiyo Sumitomo, Okazaki, JP;
Yasushi Higuchi, Okazaki, JP;
Shigemitsu Fukatsu, Okazaki, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device includes a drift layer, a base layer on the drift layer, and trench gate structures. Each trench gate structure includes a trench reaching the drift layer by penetrating the base layer, a gate insulation layer on a wall surface of the trench, and a gate electrode on the gate insulation layer. A bottom portion of the trench gate structure is located in the drift layer and expands in a predetermined direction so that a distance between the bottom portions of adjacent trench gate structures is less than a distance between opening portions of adjacent trench gate structures in the direction. A thickness of the gate insulation layer is greater in the bottom portion than in the opening portion.