The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Apr. 05, 2012
Akira Fujimoto, Kawasaki, JP;
Ryota Kitagawa, Tokyo, JP;
Koji Asakawa, Kawasaki, JP;
Hidefumi Yasuda, Kawasaki, JP;
Yasuhiko Akaike, Kawasaki, JP;
Takeyuki Suzuki, Yokohama, JP;
Akira Fujimoto, Kawasaki, JP;
Ryota Kitagawa, Tokyo, JP;
Koji Asakawa, Kawasaki, JP;
Hidefumi Yasuda, Kawasaki, JP;
Yasuhiko Akaike, Kawasaki, JP;
Takeyuki Suzuki, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
One aspect of the present invention provides a semiconductor light-emitting device improved in luminance, and also provides a process for production thereof. The process comprises a procedure of forming a relief structure on the light-extraction surface of the device by use of a self-assembled film. In that procedure, the light-extraction surface is partly covered with a protective film so as to protect an area for an electrode to be formed therein. The electrode is then finally formed there after the procedure. The process thus reduces the area incapable, due to thickness of the electrode, of being provided with the relief structure. Between the electrode and the light-extraction surface, a contact layer is formed so as to establish ohmic contact between them.