The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Jun. 09, 2010
Kristian Groom, Sheffield, GB;
Richard Hogg, Sheffield, GB;
Kristian Groom, Sheffield, GB;
Richard Hogg, Sheffield, GB;
The University of Sheffield, Sheffield, GB;
Abstract
Embodiments of the present invention provided a method of fabricating a semiconductor light source structure. The method comprises providing a GaAs substrate; forming a lower cladding layer above the substrate, the lower cladding layer comprising an AIGaAs alloy; forming an active region above the lower cladding layer, the active region comprising a GaAs separate confinement heterostructure; and forming an upper cladding layer comprising an AIGaAs alloy above the active region in the form of an elongate stripe bounded on either side by an InGaP current-blocking layer, the elongate stripe defining an index-guided optical waveguide. The stripe is formed such that at least one free end of the stripe is spaced apart from an edge of the substrate in a direction parallel to a longitudinal axis of the stripe such that a portion of the lower cladding layer, active region, current blocking layer and upper cladding layer extend beyond the at least one free end of the stripe thereby to provide an unpumped and laterally unguided window region.