The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
May. 21, 2012
Takashi Kondo, Kanagawa, JP;
Taku Kinoshita, Kanagawa, JP;
Kazutaka Takeda, Kanagawa, JP;
Fuji Xerox Co., Ltd., Tokyo, JP;
Abstract
Provided is a light-emitting device including a semiconductor substrate of a first conductivity type, a semiconductor multilayer reflection mirror of the first conductivity type, formed on the semiconductor substrate, a first semiconductor layer of the first conductivity type, formed on the semiconductor multilayer reflection mirror, a second semiconductor layer of a second conductivity type, formed on the first semiconductor layer, a third semiconductor layer of the first conductivity type, formed on the second semiconductor layer, a fourth semiconductor layer of the second conductivity type, formed on the third semiconductor layer, a first electrode formed on a rear surface of the semiconductor substrate, and a second electrode formed on the fourth semiconductor layer, wherein the semiconductor multilayer reflection mirror includes a first selectively oxidized region and a first conductive region adjacent to the first oxidized region, and the first conductive region electrically connects the semiconductor substrate and the first semiconductor layer.