The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Oct. 31, 2008
Barbaros Ozyilmaz, Singapore, SG;
Dmitri Efetov, New York, NY (US);
Pablo Jarillo-herrero, Cambridge, MA (US);
Philip Kim, New York, NY (US);
Barbaros Ozyilmaz, Singapore, SG;
Dmitri Efetov, New York, NY (US);
Pablo Jarillo-Herrero, Cambridge, MA (US);
Philip Kim, New York, NY (US);
The Trustees of Columbia University in the City of New York, New York, NY (US);
Abstract
A locally gated graphene nanostructure is described, along with methods of making and using the same. A graphene layer can include first and second terminal regions separated by a substantially single layer gated graphene nanoconstriction. A local first gate region can be separated from the graphene nanoconstriction by a first gate dielectric. The local first gate region can be capacitively coupled to gate electrical conduction in the graphene nanoconstriction. A second gate region can be separated from the graphene nanoconstriction by a second gate dielectric. The second gate region can be capacitively coupled to provide a bias to a first location in the graphene nanoconstriction and to a second location outside of the graphene nanoconstriction. Methods of making and using locally gated graphene nanostructures are also described.