The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2014

Filed:

Dec. 27, 2012
Applicants:

Yoshifumi Nishi, Niigata, JP;

Takao Marukame, Kanagawa, JP;

Takayuki Ishikawa, Kanagawa, JP;

Masato Koyama, Kanagawa, JP;

Inventors:

Yoshifumi Nishi, Niigata, JP;

Takao Marukame, Kanagawa, JP;

Takayuki Ishikawa, Kanagawa, JP;

Masato Koyama, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to an embodiment, a semiconductor device includes first and second memristors. The first memristor includes a first electrode made of a first material, a second electrode made of a second material, and a first resistive switching film arranged between the first and second electrodes. The first resistive switching film is connected to both the first and second electrodes. The second memristor includes a third electrode made of a third material, a fourth electrode made of the second material, and a second resistive switching film arranged between the third and fourth electrodes. The second resistive switching film is connected to both the third and fourth electrodes. The work function of the first material is smaller than that of the second material. The work function of the third material is larger than that of the second material.


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