The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Apr. 27, 2012
Applicants:
Hiroyuki Minemura, Kokubunji, JP;
Yumiko Anzai, Saitama, JP;
Inventors:
Hiroyuki Minemura, Kokubunji, JP;
Yumiko Anzai, Saitama, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
An intermediate layer including at least one of elements constituting a phase change material and silicon is arranged between a recording layer composed of the phase change material and an npolysilicon film to reduce contact resistance between the recording layer and the npolysilicon film, thereby simplifying the structure of a phase change memory and reducing the cost thereof. If the phase change material contains Ge, Sb, and Te, for example, the intermediate layer includes at least one of Si—Sb, Si—Te, and Si—Ge.