The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Sep. 05, 2012
Dae-han Choi, Loudonville, NY (US);
Jae Hee Hwang, Watervliet, NY (US);
Wontae Hwang, Clifton Park, NY (US);
Dae-Han Choi, Loudonville, NY (US);
Jae Hee Hwang, Watervliet, NY (US);
Wontae Hwang, Clifton Park, NY (US);
Globalfoundries Inc., Grand Cayman, KY;
Abstract
A process is provided for selective removal of one or more unwanted fins during FINFET device fabrication. In one aspect, the process includes: providing a conformal protective layer over multiple fin structures on a substrate; patterning one or more openings over the unwanted fin structure(s); and removing at least a top portion of the unwanted fin structure(s) exposed through the opening(s), the removing including removing at least a portion of the conformal protective layer over the unwanted fin structure(s) exposed through the opening(s). In enhanced aspects, the removing includes removing a hard mask from the at least one unwanted fin structure(s) exposed through the opening(s), and selectively removing semiconductor material of at least one unwanted fin structure(s). The conformal protective layer protects one or more remaining fin structures during the selective removal of the semiconductor material of the unwanted fin structure(s).