The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Dec. 02, 2010
Applicants:
Rainer Herberholz, Cambridge, GB;
David Vigar, Cambridge, GB;
Inventors:
Rainer Herberholz, Cambridge, GB;
David Vigar, Cambridge, GB;
Assignee:
Cambridge Silicon Radio Limited, Cambridge, GB;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
Abstract
A MOS device, () comprising a semiconductor substrate comprising a channel, an electrode () insulated from the channel and positioned at least partly over the channel, and at least one contact () to the electrode, the at least one contact being positioned at least partly over the channel.
Herberholz, Rainer. (2014). On-gate contacts in a mos device (U.S. Patent No. 8658524). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8658524
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile