The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Jul. 01, 2010
Tom Sterken, Ghent, BE;
Geert Altena, Eindhoven, NL;
Martijn Goedbloed, Aachen, DE;
Robert Puers, Blanden, BE;
Tom Sterken, Ghent, BE;
Geert Altena, Eindhoven, NL;
Martijn Goedbloed, Aachen, DE;
Robert Puers, Blanden, BE;
IMEC, Leuven, BE;
Stichting IMEC Nederland, Eindhoven, NL;
Katholieke Universiteit Leuven, KU Leuven R&D, Leuven, BE;
Abstract
A method for fabricating an out-of-plane variable overlap MEMS capacitor comprises: providing a substrate () comprising a first layer (), a second layer (), and a third layer () stacked on top of one another; and etching a plurality of first trenches () through the third layer (), through the second layer (), and into the first layer () using a single etching mask. Etching the plurality of first trenches () defines a plurality of first fingers () in the third layer () and a plurality of second fingers () in the first layer (). By using a single mask, the process is self-aligned. The method further comprises removing the second layer () in a first region where the plurality of first trenches () are provided, thereby forming a spacing or gap between the plurality of first fingers () and the plurality of second fingers ().