The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Mar. 12, 2012
Gaku Sudo, Kanagawa-ken, JP;
Gaku Sudo, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a method for manufacturing a semiconductor device includes forming a depression in an upper portion of a semiconductor substrate, placing a sacrificial material in the depression, forming a plurality of fins extending in one direction and arranged periodically by selectively removing the semiconductor substrate and the sacrificial material, forming a device isolation insulating film in a lower portion of space between the fins, removing the sacrificial material, forming a gate insulating film on an exposed surface of the fin, and forming a gate electrode. The gate electrode extends in a direction crossing the one direction so as to straddle the fin on the device isolation insulating film.