The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Sep. 23, 2010
Timothy A. Cowen, Lower Burrell, PA (US);
Timothy A. Cowen, Lower Burrell, PA (US);
Advantech Global, Ltd, Tortola, VG;
Abstract
A method of forming a shadow mask vapor deposited transistor includes shadow mask vapor depositing a semiconductor segment. An electrically conductive drain contact is shadow mask vapor deposited on a first part of the semiconductor segment and a first insulator is shadow mask vapor deposited on the drain contact. An electrically conductive source contact is shadow mask vapor deposited on a second part of the semiconductor segment spaced from the drain contact and a second insulator is shadow mask vapor deposited on the source contact. A third insulator is shadow mask vapor deposited over at least part of each of the first and second insulators and the semiconductor segment between the drain contact and the source contact. An electrically conductive gate contact is shadow mask vapor deposited on the third insulator and in spaced relation to the semiconductor segment between the drain contact and the source contact.