The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2014

Filed:

Jul. 30, 2012
Applicants:

Janice H. Nickel, Sunnyvale, CA (US);

Matthew D. Pickett, San Francisco, CA (US);

Inventors:

Janice H. Nickel, Sunnyvale, CA (US);

Matthew D. Pickett, San Francisco, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/16 (2006.01); H01L 21/20 (2006.01); H01L 47/00 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of making a memristor having an embedded switching layer include exposing a surface portion of a first electrode material within a via to a reactive species to form the switching layer embedded within and at surface of the via. The via is in contact with a first conductor trace. The method further includes depositing a layer of a second electrode material adjacent to the via surface and patterning the layer into a column aligned with the via. The method further includes depositing an interlayer dielectric material to surround the column and providing a second conductor trace in electrical contact with the second electrode material of the column.


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