The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
May. 18, 2012
Shusaku Bando, Anan, JP;
Yasuhiro Miki, Tokushima, JP;
Masahiko Onishi, Anan, JP;
Hirofumi Nishiyama, Tokushima, JP;
Shusaku Bando, Anan, JP;
Yasuhiro Miki, Tokushima, JP;
Masahiko Onishi, Anan, JP;
Hirofumi Nishiyama, Tokushima, JP;
Nichia Corporation, Anan-shi, JP;
Abstract
To provide a method of manufacturing a nitride semiconductor light emitting element, which has a small number of steps and thus, can improve productivity, the method of manufacturing a nitride semiconductor light emitting element including a nitride semiconductor light emitting element structure having an n-type nitride semiconductor layer and a p-side nitride semiconductor layer which are laminated on a substrate, an n-side pad electrode connecting surface and a p-side pad electrode connecting surface which are formed on the same plane of the substrate; a n-side pad electrode on the n-side pad electrode connecting surface; and a p-side pad electrode on the p-side pad electrode connecting surface, and in the manufacturing method, a pad electrode layer forming step, a resist pattern forming step, a pad electrode layer etching step, a protective layer forming step and a resist pattern removing step are sequentially performed.