The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2014

Filed:

Oct. 08, 2010
Applicants:

Masahiro Hashimoto, Tokyo, JP;

Kazuya Sakai, Tokyo, JP;

Toshiyuki Suzuki, Tokyo, JP;

Kazunori Ono, Tokyo, JP;

Inventors:

Masahiro Hashimoto, Tokyo, JP;

Kazuya Sakai, Tokyo, JP;

Toshiyuki Suzuki, Tokyo, JP;

Kazunori Ono, Tokyo, JP;

Assignee:

Hoya Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/50 (2012.01); B08B 3/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided is a transfer mask which has a transfer pattern formed in a pattern-forming thin film provided on a transparent substrate and is adapted to be applied with exposure light having a wavelength of 200 nm or less. The pattern-forming thin film is made of a material containing silicon an a transition metal other than chromium and the chromium content in the film is less than 1.0×10atoms/cm.


Find Patent Forward Citations

Hashimoto, Masahiro. (2014). Transfer mask, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device (U.S. Patent No. 8658334). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8658334

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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