The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
May. 12, 2008
Kuo-yao Cho, Da-An Shiang, TW;
Wen-bin Wu, Longtan Township, Taoyuan County, TW;
Ya-chih Wang, Yonghe, TW;
Chiang-lin Shih, Linkou Township, Taipei County, TW;
Chao-wen Lay, Gongguan Township, Miaoli County, TW;
Chih-huang Wu, Taoyuan, TW;
Kuo-Yao Cho, Da-An Shiang, TW;
Wen-Bin Wu, Longtan Township, Taoyuan County, TW;
Ya-Chih Wang, Yonghe, TW;
Chiang-Lin Shih, Linkou Township, Taipei County, TW;
Chao-Wen Lay, Gongguan Township, Miaoli County, TW;
Chih-Huang Wu, Taoyuan, TW;
Nanya Technology Corp., Tao-Yuan Hsien, TW;
Abstract
A method of improving lithography resolution on a semiconductor, including the steps of providing a substrate on which a protecting layer, a first etching layer and a photoresist layer are sequentially formed; patterning the photoresist layer to form an opening so as to partially reveal the first etching layer; implanting a first ion into the revealed first etching layer to form a first doped area; and implanting a second ion into the revealed first etching layer to form a second doped area, wherein the first doped area is independent from the second doped area is provided.