Timing margins for on-chip variations from sensitivity data

Abstract

An approach is provided in which a system executes transistor-level circuit simulation of a standard cell that includes parameters corresponding to a semiconductor manufacturing technology process. Sensitivity data is collected that quantifies changes to performance metrics corresponding to the standard cell in response to adjusting one or more of the parameters during the transistor-level circuit simulation. In turn, the system generates derate factors based upon the sensitivity data and tests an integrated circuit design according to the derate factors. Testing the integrated circuit design includes performing static timing analysis on the integrated circuit design that simulates operation of a device built from the integrated circuit design using the semiconductor technology process. In one embodiment, when the static timing analysis indicates timing violations, the system dynamically generates custom derate factors for particular cell instances corresponding to the timing violations. In turn, subsequent timing analysis is performed using the custom derate factors.