The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2014

Filed:

Nov. 17, 2011
Applicants:

Beom Yong Kim, Gyeonggi-do, KR;

Kwon Hong, Gyeonggi-do, KR;

Kee Jeung Lee, Seoul, KR;

Ki Hong Lee, Gyeonggi-do, KR;

Inventors:

Beom Yong Kim, Gyeonggi-do, KR;

Kwon Hong, Gyeonggi-do, KR;

Kee Jeung Lee, Seoul, KR;

Ki Hong Lee, Gyeonggi-do, KR;

Assignee:

Hynix Semiconductor Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/40 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract

A non-volatile memory device includes a plurality of memory cells stacked along a channel protruded from a substrate, a first select transistor connected to one end of the plurality of memory cells, a first interlayer dielectric layer for being coupled between a source line and the first select transistor, and a second interlayer dielectric layer disposed between the first select transistor and the one end of the plurality of memory cells, and configured to include a first recess region.


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