The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Oct. 26, 2010
Kikuo Utsuno, Miyazaki, JP;
Kikuo Utsuno, Miyazaki, JP;
Abstract
A voltage change detection device is provided, which can reduce a deviation of a detection potential and can detect a voltage change within a predetermined detection potential even when the threshold voltage of a field effect transistor is deviated. The voltage change detection device includes a first field effect transistor, a second field effect transistor, and a detection signal generator. The first field effect transistor has a drain connected to a power supply potential, a source connected to a first constant current source or a first resistor at a first node, and a gate connected to a fixed voltage. The second field effect transistor has a drain and a gate connected to the power supply potential and a source connected to a second constant current source or a second resistor at a second node. The detection signal generator generates a detection signal indicating that the power supply potential has crossed a predetermined detection potential according to a comparison between a voltage at the first node and a voltage at the second node.