The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Aug. 01, 2011
Shuichi Mizusawa, Sayama, JP;
Shuichi Mizusawa, Sayama, JP;
Nihon Dempa Kogyo Co., Ltd., Tokyo, JP;
Abstract
The present disclosure provides a manufacturing method of a quartz-crystal device, in which its lid and base is manufactured with smaller thermal expansion coefficient between AT-cut quartz-crystal wafer. The method for manufacturing a quartz-crystal device comprises the steps of: preparing an AT-cut quartz-crystal wafer () having a plurality of frames, the frame includes an AT-cut vibrating piece having a first principal surface and an second principal surface, and an outer frame which surrounds the AT-cut vibrating piece for supporting the AT-cut frame; preparing a lid wafer () having a plurality of a lids; preparing a quartz-crystal base wafer () including a plurality of a base; and bonding the AT-cut quartz-crystal wafer, the quartz-crystal base wafer and the quartz-crystal lid wafer; wherein size of the AT-cut quartz-crystal wafer, the quartz-crystal base wafer and the quartz-crystal lid wafer are between three to four inches; and the quartz-crystal base wafer and the quartz-crystal lid wafer are cut at an angle between 24°00' or more and 32°28′ or less from crystallographic Z-axis.