The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2014

Filed:

Jul. 29, 2013
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Christian Hennesthal, Niederau, DE;

Oliver Aubel, Dresden, DE;

Jens Poppe, Radebeul, DE;

Holger Pagel, Dresden, DE;

Andreas Kurz, Dresden, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01);
U.S. Cl.
CPC ...
Abstract

Metal fuses in semiconductor devices may be formed on the basis of additional mechanisms for obtaining superior electromigration in the fuse bodies. To this end, the compressive stress caused by the current-induced metal diffusion may be restricted or reduced in the fuse body, for instance, by providing a stress buffer region and/or by providing a dedicated metal agglomeration region. The concept may be applied to the metallization system and may also be used in the device level, when fabricating the metal fuse in combination with high-k metal gate electrode structures.


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Hennesthal, Christian. (2014). Semiconductor device comprising metal-based efuses of enhanced programming efficiency by enhancing metal agglomeration and/or voiding (U.S. Patent No. 8653624). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8653624

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