The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Jun. 04, 2012
Mitsuhito Mase, Hamamatsu, JP;
Takashi Suzuki, Hamamatsu, JP;
Tomohiro Yamazaki, Hamamatsu, JP;
Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
A range image sensoris provided with a semiconductor substrateA having a light incident surfaceBK and a surfaceFT opposite to the light incident surfaceBK, a photogate electrode PG, first and second gate electrodes TX, TX, first and second semiconductor regions FD, FD, and a third semiconductor region SR. The photogate electrode PG is provided on the surfaceFT. The first and second gate electrodes TX, TXare provided next to the photogate electrode PG. The first and second semiconductor regions FD, FDaccumulate respective charges flowing into regions immediately below the respective gate electrodes TX, TX. The third semiconductor region SRis located away from the first and second semiconductor regions FD, FDand on the light incident surfaceBK side and has the conductivity type opposite to that of the first and second semiconductor regions FD, FD