The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Feb. 15, 2011
Applicants:
Yun-hyuck Ji, Gyeonggi-do, KR;
Tae-yoon Kim, Gyeonggi-do, KR;
Seung-mi Lee, Gyeonggi-do, KR;
Woo-young Park, Gyeonggi-do, KR;
Inventors:
Yun-Hyuck Ji, Gyeonggi-do, KR;
Tae-Yoon Kim, Gyeonggi-do, KR;
Seung-Mi Lee, Gyeonggi-do, KR;
Woo-Young Park, Gyeonggi-do, KR;
Assignee:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a gate insulation layer formed over a substrate and having a high dielectric constant, a gate electrode formed over the gate insulation layer and a work function control layer formed between the substrate and the gate insulation layer and inducing a work function shift of the gate electrode.