The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Jun. 02, 2011
Teppei Hirotsu, Hitachi, JP;
Nobuyasu Kanekawa, Hitachi, JP;
Itaru Tanabe, Naka, JP;
Hitachi Automotive Systems, Ltd., Hitachinaka-shi, JP;
Abstract
This invention provides a current control semiconductor element in which dependence of a sense ratio on a temperature distribution is eliminated and the accuracy of current detection using a sense MOSFET can be improved, and to provide a control device using the current control semiconductor element. The current control semiconductor elementincludes a main MOSFETthat drives a current and a sense MOSFETthat is connected to the main MOSFET in parallel and detects a current shunted from a current of the main MOSFET. The main MOSFET is formed using a multi-finger MOSFET that has a plurality of channels and is arranged in a row. When a distance between the center of the multi-finger MOSFETand a channel located farthest from the center of the multi-finger MOSFETis indicated by L, a channel that is located closest to a position distant by a distance of (L/(√3)) from the center of the multi-finger MOSFET is used as a channel for the sense MOSFET