The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Jul. 19, 2012
SO Watanabe, Mito, JP;
Masaki Shiraishi, Hitachinaka, JP;
Hiroshi Suzuki, Hitachi, JP;
Mutsuhiro Mori, Mito, JP;
So Watanabe, Mito, JP;
Masaki Shiraishi, Hitachinaka, JP;
Hiroshi Suzuki, Hitachi, JP;
Mutsuhiro Mori, Mito, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A semiconductor device includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type on the first semiconductor layer; trenches in the first semiconductor layer; a semiconductor protruding part on the first semiconductor layer; a third semiconductor layer on the semiconductor protruding part; a fourth semiconductor layer on the third semiconductor layer; a gate insulating layer disposed along the trench; a first interlayer insulating layer disposed along the trench; a first conductive layer facing to the fourth semiconductor layer; a second conductive layer on the first interlayer insulating layer; a second interlayer insulating layer covering the second conductive layer; a third conductive layer on the third semiconductor layer and fourth semiconductor layer; a contacting part connecting the third conductive layer and third semiconductor layer; and a fourth conductive layer formed on the second semiconductor layer.