The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Sep. 14, 2012
Joon-sung Lim, Yongin-si, KR;
Jongho Park, Seoul, KR;
Okcheon Hong, Yongin-si, KR;
Jung-hwan Park, Hwaseong-si, KR;
Joon-Sung Lim, Yongin-si, KR;
Jongho Park, Seoul, KR;
Okcheon Hong, Yongin-si, KR;
Jung-Hwan Park, Hwaseong-si, KR;
Abstract
Semiconductor devices and a methods of fabricating the semiconductor devices are provided. The semiconductor devices may include a pattern on a substrate. The semiconductor devices may also include a capping dielectric layer on the pattern. The semiconductor devices may further include a first nitride layer on the capping dielectric layer. Moreover, the semiconductor devices may include a second nitride layer on the first nitride layer. A concentration of nitrogen in the first nitride layer may be greater than that in the second nitride layer.