The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Sep. 27, 2012
Applicant:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Inventors:
Fumio Yamada, Osaka, JP;
Takeshi Araya, Osaka, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0312 (2006.01); H01L 31/0256 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 31/06 (2012.01); H01L 21/337 (2006.01); H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes: a substrate comprised of gallium nitride; an active layer provided on the substrate; a first buffer layer that is provided between the substrate and the active layer and is comprised of indium aluminum nitride (InAlN, 0.15≦x≦0.2); and a spacer layer that is provided between the first buffer layer and the active layer and is comprised of aluminum nitride having a thickness of 1 nm or more to 10 nm or less.