The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Sep. 02, 2010
Applicants:
Shuhei Mitani, Kyoto, JP;
Yuki Nakano, Kyota, JP;
Heiji Watanabe, Mino, JP;
Takayoshi Shimura, Ikeda, JP;
Takuji Hosoi, Ibaraki, JP;
Takashi Kirino, Suita, JP;
Inventors:
Shuhei Mitani, Kyoto, JP;
Yuki Nakano, Kyota, JP;
Heiji Watanabe, Mino, JP;
Takayoshi Shimura, Ikeda, JP;
Takuji Hosoi, Ibaraki, JP;
Takashi Kirino, Suita, JP;
Assignee:
Rohm Co., Ltd., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of manufacturing a semiconductor device includes the steps of forming a silicon oxide film on a silicon carbide substrate, annealing the silicon carbide substrate and the silicon oxide film in gas containing hydrogen, and forming an aluminum oxynitride film on the silicon oxide film after the annealing of the silicon carbide substrate and the silicon oxide film.