The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Jul. 08, 2010
Yohsuke Kanzaki, Osaka, JP;
Yudai Takanishi, Osaka, JP;
Yoshiki Nakatani, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
Disclosed is a thin film transistor wherein an ON current is increased and a leak current is reduced. The channel layerof the TFTis formed of a crystalline silicon, and the lower surface of one end of the channel layeris electrically connected to the surface of an nsilicon layer, and the lower surface of the other end is electrically connected to the surface of an nsilicon layer. Furthermore, the side surface of said end of the channel layeris electrically connected to a source electrode, and the side surface of the other end is electrically connected to a drain electrode. Thus, a barrier that makes electrons, which act as carriers, not easily transferred is formed on the boundary between the source electrodeand the channel layer. As a result, the ON current that flows when the TFTis in the ON state can be increased, and the leak current that flows when the TFT is in the OFF state can be reduced.