The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Mar. 05, 2010
Jun Yamada, Ibaraki, JP;
Jun Yamada, Ibaraki, JP;
Konica Minolta Holdings, Inc., Tokyo, JP;
Abstract
Disclosed is a method for manufacturing a thin film transistor in which a semiconductor film in a channel portion is provided between a source electrode and a drain electrode, wherein a partition layer (a bank) can be appropriately formed. The method comprises the steps of: forming two underlying electrodes on an underlying layer; forming a partition layer on the surface of the underlying layer containing the two underlying electrodes so as to surround an area where the source electrode and the drain electrode are to be formed; forming the source electrode and the drain electrode by a plating method on the surfaces of the two underlying electrodes, which are surrounded by the partition layer; and applying semiconductor solution, in which a semiconductor material is dissolved or dispersed, to the area surrounded by the partition layer so that a semiconductor film is formed in the area.