The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Nov. 19, 2010
Brian C. Auman, Avondale, PA (US);
Meredith L. Dunbar, Canal Winchester, OH (US);
Tao He, Wilmington, DE (US);
Kostantinos Kourtakis, Media, PA (US);
Brian C. Auman, Avondale, PA (US);
Meredith L. Dunbar, Canal Winchester, OH (US);
Tao He, Wilmington, DE (US);
Kostantinos Kourtakis, Media, PA (US);
E. I. du Pont de Nemours and Company, Wilmington, DE (US);
Abstract
The present disclosure is directed to a thin film transistor composition. The thin film transistor composition has a semiconductor material and a substrate. The substrate is composed of a polyimide and a sub-micron filler. The polyimide is derived from at least one aromatic dianhydride component selected from rigid rod dianhydride, non-rigid rod dianhydride and combinations thereof, and at least one aromatic diamine component selected from rigid rod diamine, non-rigid rod diamine and combinations thereof. The mole ratio of dianhydride to diamine is 48-52:52-48 and the ratio of X:Y is 20-80:80-20 where X is the mole percent of rigid rod dianhydride and rigid rod diamine, and Y is the mole percent of non-rigid rod dianhydride and non-rigid rod diamine. The sub-micron filler is less than 550 nanometers in at least one dimension; has an aspect ratio greater than 3:1; is less than the thickness of the film in all dimensions.