The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Feb. 23, 2011
Shigeya Kimura, Kanagawa-ken, JP;
Taisuke Sato, Kanagawa-ken, JP;
Toshihide Ito, Tokyo, JP;
Takahiro Sato, Kanagawa-ken, JP;
Toshiyuki Oka, Kanagawa-ken, JP;
Shinya Nunoue, Chiba-ken, JP;
Shigeya Kimura, Kanagawa-ken, JP;
Taisuke Sato, Kanagawa-ken, JP;
Toshihide Ito, Tokyo, JP;
Takahiro Sato, Kanagawa-ken, JP;
Toshiyuki Oka, Kanagawa-ken, JP;
Shinya Nunoue, Chiba-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor light emitting device includes: a stacked structural body, a first electrode; and a second electrode. The stacked structural body includes a first semiconductor layer of n-type, a second semiconductor layer of p-type, and a light emitting portion provided therebetween. The first electrode includes a first contact electrode portion. The second electrode includes a second contact electrode portion and a p-side pad electrode. A sheet resistance of the second contact electrode portion is lower than a sheet resistance of the first semiconductor layer. The p-side pad electrode is provided farther inward than a circumscribed rectangle of the first contact electrode portion, and the first contact electrode portion is provided farther outward than a circumscribed rectangle of the p-side pad electrode.