The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Feb. 13, 2013
Applied Materials, Inc., Santa Clara, CA (US);
Yi-Chiau Huang, Fremont, CA (US);
Jiping Li, Palo Alto, CA (US);
Miao Jin, San Jose, CA (US);
Bingxi Sun Wood, Cupertino, CA (US);
Errol Antonio C. Sanchez, Tracy, CA (US);
Yihwan Kim, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods and apparatus for forming a germanium containing film on a patterned substrate are described. The patterned substrate is a silicon, or silicon containing material, and may have a mask material formed on a surface thereof. The germanium containing material is formed selectively on exposed silicon in the recesses of the substrate, and an overburden of at least 50% is formed on the substrate. The germanium containing layer is thermally treated using pulsed laser radiation, which melts a portion of the overburden, but does not melt the germanium containing material in the recesses. The germanium containing material in the recesses is typically annealed, at least in part, by the thermal treatment. The overburden is then removed.