The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Jul. 01, 2010
Applicants:
Alexei Sirbu, Ecublens, CH;
Alexandru Mereuta, Ecublens, CH;
Andrei Caliman, Chavannes-Renens, CH;
Inventors:
Assignee:
Ecole Polytechnique Federale de Lausanne, Lausanne, CH;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/30 (2006.01); H01L 21/46 (2006.01); H01S 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming an optoelectronic device comprising growing a first multi-layerrepresenting a reflector on a first substrate and a second multilayerrepresenting an active region on a second substrate, the first and second substrates being lattice mismatched, fusing the first multi-layerto a third substrate, wherein the material of the third substrateis lattice matched with respect to the material of the second multi-layer, removing the first substrate to expose the first multi-layer, and fusing the first multi-layer to the second multi-layer